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VQ3001J/3001P
N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays
Product Summary
V(BR)DSS Min (V)
N-Channel P-Channel 30 -30
rDS(on) Max (W)
1 @ VGS = 12 V 2 @ VGS = -12 V
VGS(th) (V)
0.8 to 2.5 -2 to -4.5
ID (A)
0.85 -0.6
Features
D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/-3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage
Benefits
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
Dual-In-Line D1 N S1 G1 1 2 3 4 5 6 7 Top View
Applications
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
14 13 12 11 10 9 8
D4 S4 G4 NC G3 S3 D3 N P
Plastic: VQ3001J Sidebraze: VQ3001P
NC G2 P S2 D2
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Single Parameter
Drain-Source Voltage Gate-Source Gate Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C VQ3001J VQ3001P TA= 25_C TA= 100_C VGS ID IDM PD RthJA TJ, Tstg
Symbol
VDS
N-Channel
30 "20 "20 0.85 0.52 3 1.3 0.52 96.2 -55 to 150
P-Channel
30 "20 "20 -0.6 -0.37 -2 1.3 0.52 96.2
Total Quad
Unit
V
A
Power Dissipation Maximum Junction-to-Ambient
2 0.8 62.5 -55 to 150
W _C/W _C
Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70221.
Siliconix S-52426--Rev. C, 14-Apr-97
1
VQ3001J/3001P
Specificationsa
Limits
N Channel P Channel
Parameter Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Gate Body Leakage
Symbol
Test Condition
Typb
Min
Max
Min
Max
Unit
V(BR)DSS
VGS = 0 V, ID = 10 mA VGS = 0 V, ID = -10 mA VDS = VGS, ID = 1 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "20 V, TJ = 125_C VDS = 24 V, VGS = 0 V
55 -55 1.5 -3.1
30 -30 V 0.8 2.5 -2 "100 "500 10 -10 500 -500 mA -4.5 "100 "500 nA
VGS(th)
IGSS
Zero-Gate Voltage Drain Current
IDSS
VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = -24 V, VGS = 0 V, TJ = 125_C
On State Drain Currentc
ID( ) D(on)
VDS = 10 V, VGS = 12 V VDS = -10 V, VGS = -12 V VGS = 5 V, ID = 0.2 A VGS = 12 V, ID = 1 A
3 -2 1.2 0.81 1.6 1.65 2.7 500 390
2 -1.5 1.75 1.0 2.0 2.0 4.0 250 200 mS W A
Drain-Source On-State Resistancec
rDS(on)
VGS = -12 V, ID = -1 A VGS = 12 V, ID = 1 A, TJ = 125_C VGS = -12 V, ID = -1 A, TJ = 125_C
Forward Transconductance c
gf fs
VDS = 10 V, ID = 0.5 A VDS = -10 V, ID = -0.5 A
Dynamic
Input Capacitance Ci iss N-Channel N Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = -15 V VGS = 0 V f = 1 MHz 15 V, V, Reverse Transfer Capacitance Crss N-Channel Turn-On Turn On Time tON VDD = 15 V, RL = 23 W V ID ^ 0.6 A, VGEN = 10 V, RG = 25 W P-Channel Turn-Off Turn Off Time tOFF VDD = -15 V RL = 23 W 15 V, ID ^ -0.6 A, VGEN = -10 V, RG = 25 W 38 60 33 45 8 15 9 19 14 16 30 30 30 30 ns 35 60 110 100 pF 110 150
Output Capacitance
Coss
Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%.
VNDQ03/VPEA03
2
Siliconix S-52426--Rev. C, 14-Apr-97
VQ3001J/3001P
Typical Characteristics (25_C Unless Noted)
Ohmic Region Characteristics
2.0 TJ = 25_C VGS = 10 V 1.6 I D - Drain Current (mA) I D - Drain Current (A) 5V 160 2.7 V 120 2.5 V 80 2.3 V 40 2.1 V 1.7 V 0 0 1 2 3 4 5 0 VDS - Drain-to-Source Voltage (V) 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) 2.0 7V 200 6V 10 V 2.9 V TJ = 25_C
N-Channel
Output Characteristics for Low Gate Drive
1.2
0.8
4V
0.4
3V 2V
0
rDS(on) - On Resistance (W )
500
Transfer Characteristics
VDS = 15 V 3 rDS(on) - On-Resistance ( W )
On-Resistance vs. Gate-to-Source Voltage
TJ = 25_C ID = 0.2 A 0.5 A 2 1.0 A 1
400 I D - Drain Current (mA)
300
200 TJ = 125_C 100 25_C -55_C 0 0 1 2 3 4 5
0 0 4 8 12 16 20
VGS - Gate-Source Voltage (V)
VGS - Gate-Source Voltage (V)
2.5 rDS(on) - Drain-Source On-Resistance ( W )
On-Resistance vs. Drain Current
rDS(on) - Drain-Source On-Resistance (Normalized) TJ = 25_C
2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V ID = 0.5 A 0.1 A
2.0 VGS = 4.5 V 1.5 6V
1.0
10 V
0.5
0 0 0.5 1.0 1.5 2.0 2.5 3.0 ID - Drain Current (A)
-50
-10
30
70
110
150
TJ - Junction Temperature (_C)
Siliconix S-52426--Rev. C, 14-Apr-97
3
VQ3001J/3001P
Typical Characteristics (25_C Unless Noted)
10 VDS = 10 V I D - Drain Current (mA) TJ = 150_C C - Capacitance (pF) 1 100_C 25_C 0.1 100 80 60 40 20 -55_C 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGS - Gate-to-Source Voltage (V) 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V)
N-Channel
Capacitance
VGS = 0 V f = 1 MHz
Threshold Region
120
Ciss Coss Crss
Gate Charge
6 ID = 1 A VGS - Gate-to-Source Voltage (V) 5 4 VDS = 15 V 3 24 V 2 1 0 0 80 160 240 320 400 Qg - Total Gate Charge (pC) 100 1 0.1 t - Switching Time (ns) 100
Load Condition Effects on Switching
VDD = 25 V RG = 25 W VGS = 0 to 10 V
10 td(on) tr
td(off) tf
1 ID - Drain Current (A)
10
Drive Resistance Effects on Switching
g fs - Forward Transconductance (mS) VDD = 25 V RL = 24 W VGS = 0 to 10 V ID = 1 A
500
Transconductance
TJ = -55_C 25_C
400 150_C 300
t - Switching Time (ns)
10 td(on) tf
td(off)
200 VDS = 7.5 V 300 ms, 1% Duty Cycle Pulse Test
tr
100
1 10 50 RG - Gate Resistance (W) 100
0 0 100 200 300 400 500 ID - Drain Current (A)
4
Siliconix S-52426--Rev. C, 14-Apr-97
VQ3001J/3001P
Typical Characteristics (25_C Unless Noted)
Output Characteristics
-2.0 VGS = -10 V -1.6 I D - Drain Current (A) -9 V -8 V I D - Drain Current (mA) -1000 125_C -800 TJ = -55_C 25_C
P-Channel
Transfer Characteristics
-1.2
-7 V
-600
-0.8
-6 V
-400
-0.4
-5 V -4 V
-200
0 0 -1 -2 -3 -4 VDS - Drain-to-Source Voltage (V) -5
0 0 -2 -4 -6 -8 VGS - Gate-to-Source Voltage (V) -10
175 150 C - Capacitance (pF) 125 100 75 50 25 0 0 -5 -10 Crss
Capacitance
VGS = 0 V f = 1 MHz
-18 VGS - Gate-to-Source Voltage (V) -15 -12 -9 -6 -3 0
Gate Charge
VDS = -15 V ID = -1 A VDS = -24 V ID = -1 A
Ciss Coss
-15
-20
-25
-30
0
1000
2000
3000
4000
5000
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (pC)
1.65 1.50 rDS(on) - On-Resistance ( W ) (Normalized) 1.35 1.20 1.05 0.90 0.75 -50
On-Resistance vs. Junction Temperature
-10 K
Source-Drain Diode Forward Voltage
TJ = 150_C
VGS = -4.5 V ID = -0.5 A VGS = -10 V ID = -0.1 A
I S -Source Current (A)
-1 K
TJ = 25_C
-100
-10
-1 -25 0 25 50 75 100 125 150 0
TJ - Junction Temperature (_C)
-1.0 -2.0 -3.0 VSD - Source-to-Drain Voltage (V)
-4.0
Siliconix S-52426--Rev. C, 14-Apr-97
5
VQ3001J/3001P
Typical Characteristics (25_C Unless Noted)
On-Resistance vs. Gate-to-Source Voltage
3.0 ID = -0.5 A rDS(on) - On-Resistance ( W ) 2.5 I D - Drain Current ( mA) -1 K -10 K VDS = -10 V TJ = 150_C
P-Channel
Threshold Region
2.0
-100
100_C
25_C
1.5
-0.2 A
-10 -55_C
1.0
0 0 -4 -8 -12 -16 -20 VGS - Gate-to-Source Voltage (V)
-1 -1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
VGS - Gate-Source Voltage (V)
6
Siliconix S-52426--Rev. C, 14-Apr-97

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